2SB1182 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – Medium Power Transistor

PNP PLASTIC ENCAPSULATE TRA NSISTORS
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (T_A=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j
T_stg
2SB1182
1.BASE
2.COLLECTOR
3.EMITTER
23
1
D-PAK(TO-252)
Limits
Unit
-40
V
-32
V
-5.0
V
-2.0
A
1.5
W
+150
˚C
-55 to +150
˚C
ELECTRICAL CHARACTERISTICS(T_A=25˚Cunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
I_C=-50µA
Collector-Emitter Breakdown Voltage
I_C=-1.0mA
Emitter-Base Breakdown Voltage
I_E=-50µA
Symbol
Min
BV_CBO
-40
BV_CEO
-32
BV_EBO
-5.0
V_CB=-20V
I_CBO
-
V_EB =-4.0V
I_EBO
-
Typ Max Unit
-
-
V
-
-
V
-
-
V
-
-1.0 µA
-
-1.0 µA
WEITRON
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http://www.weitron.com.tw
30-Nov-07