2SB1132 Datasheet, PDF (1/5 Pages) Rohm – Medium Power Transistor

PNP Plastic-Encapsulate Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25^%C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature, Storage Temperature
* Single pulse Pw = 100ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj , Tstg
DEVICE MARKING
2SB1132P=BAP, 2SB1132Q=BAQ, 2SB1132R=BAR
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage (IC= -50 uAdc, IE =0)
Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0)
Emitter-Base Breakdown Voltage (IE= -50 uAdc, IC=0)
Collector Cutoff Current (VCB= -20Vdc, IE=0)
Emitter Cutoff Current (VEB= -4.0 Vdc, IC=0)
2SB1132
SOT-89
1
1. BASE
2
3
2. COLLECTOR
3. EMITTER
Value
-40
-32
-5.0
-1.0
-2.0
0.5
150, -55 to +150
Unit
Vdc
Vdc
Vdc
A(DC)
A (Pulse)*
W
%_C
Symbol
Min
Max
Unit
V(BR)CBO
-40
-
Vdc
V(BR)CEO
-32
-
Vdc
V(BR)EBO _-5.0
-
Vdc
ICBO
IEBO
-
-0.5
uAdc
-
-0.5
uAdc
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