2SB1116 Datasheet, PDF (1/4 Pages) NEC – PNP SILICON TRANSISTORS

PNP General Purpose Transistor
P b Lead(Pb)-Free
COLLECTOR
2
3
BASE
1
EMITTER
2SB1116/2SB1116A
1
2
3
TO-92
Maximum Ratings _{( TA=25}℃_{C unless otherwise noted)}
Rating
Symbol
1116
Collector-Base Voltage
VCBO
-60
1116A
-80
Collector-Emitter Voltage
VCEO
-50
-60
Emitter-Base Voltage
VEBO
-6.0
-6.0
Collector Current Continuous
lC
1000
THERMAL CHARACTERISTICS
Charact er ist ics
Total Device Dissipation
Alumina Substrate,TA=25°C
Junction Temperature
Storage Temperature
Symbol
P_D
TJ
Tstg
Max
750
+150
-55 to +150
Unit
V
V
V
mA
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(lC=-100μA, lE=0)
Collector-Emitter Breakdown Voltage
(lC=-1mA, lB=0)
Emitter-Base Breakdown Voltage
(lE=-100μA, lC=0)
Symbol Min Max
Unit
1116
1116A
V(BR)CBO
-60
-80
V
1116
1116A
V(BR)CEO ^-50
-60
V
1116
1116A
V(BR)EBO -6.0
V
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22-Jan-09