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| 2SA2018 Datasheet, PDF (1/3 Pages) Rohm – Low frequency transistor | |||
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PNP Genera Purpose Transistors
P b Lead(Pb)-Free
FEATURES:
* A collector current is large.
* Low VCE(sat). VCE(sat)â¤-250mV @ IC = -200mA / IB = -10mA
2SA2018
3
1
2
SOT-523(SC-75)
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Value
-15
-12
-6
-0.5
0.15
150
-55 to +150
Units
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
MIN
V(BR)CBO IC=-10μA, IE=0
-15
V(BR)CEO IC=-1mA, IB=0
-12
V(BR)EBO IE=-10μA, IC=0
-6
ICBO
VCB= -15 V, IE=0
IEBO
VEB=- 6V, IC=0
hFE
VCE=-2V, IC=-10mA
270
VCE(sat) IC=-200mA,IB=-10mA
fT
VCE=-2V,IC=-10mA, f=100MHz
Cob
VCB=-10V,IE=0,f=1MHz
TYP MAX UNIT
V
V
V
-0.1
μA
-0.1
μA
680
-0.25
V
260
MHz
6.5
pF
Item
2SA2018
MARKING
BW
WEITRON
http://www.weitron.com.tw
1/3
24-Jul-07
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