2N7002_09 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET

WEITRON
2N7002
Small Signal MOSFET
N-Channel
P b Lead(Pb)-Free
3 DRAIN
1
GATE
2
SOURCE
3
1
2
SOT-23
Maximum Ratings (TA=25°C Unless Otherwise Specified)
Rating
Symbol
Drain Source Voltage
V_DSS
Drain Gate Voltage(RGS = 1.0MΩ)
Drain Current
Continuous TC = 25°C (Note 1.)
– Con tinuouTsC= 100°C (Note 1.)
Pulsed (Note2.)
V_DGR
I_D
I_D
I_DM
Gate Source Voltage
Con tinuous
Non–repe titive (tp≤ 50µs)
V_GS
V_GSM
Value
60
60
±115
±75
±800
±20
±40
Unit
V
V
mA
V
V
Thermal Characteristics (TA=25°C Unless Otherwise Specified)
Characteristic
Symbol
Max
Total Device Dissipation FR–5 Board
(Note3.) TA=25°C
Derate above 25°C
P_D
225
1.8
Thermal Resistance, Junction to Ambient
R_θJA
556
Total Device Dissipation
Alumina Substrate,(Note4.)TA =25°C
Derate above 25°C
P_D
300
2.4
Thermal Resistance, Junction to Ambient
R_θJA
417
Junction Temperature
T_J
-55 to +150
Storage Temperature
T_stg
-55 to +150
Note : 1.The Power Dissipation of thepackage may result in a lower continuous drain current.
2.PulseTest: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
3.FR-5 = 1.0 x 0.75 x 0.062 in.
4.Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
°C
Device Marking
2N7002 = 702
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Rev.B 08-Jul-09