2N7002K_10 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
3 DRAIN
1
GATE *
* Gate
Pretection
Diode
SOURCE 2
Features:
* Low on-resistance.
* Fast switching speed.
* Low-voltage drive.
* Easily designed drive circuits.
* Easy to parallel.
* Pb-Free package is available.
* Esd Protected:2000V
2N7002K
3
1
2
SOT-23
Maximum Ratings(T_A= 25℃ Unless Otherwise Specified)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
60
Gate-source voltage
VGSS
±20
Continuous
ID
115
Drain current
Pulsed
IDP^{* 1}
0.8
Continuous
IDR
115
Drain reverse current
Pulsed
IDRP^{* 1}
0.8
Total power dissipation
PD^{* 2}
225
Channel temperature
Tch
150
Storage temperature
Tstg
1. Pw ≤ 10µs, Duty cycle ≤ 1%.
2. When mounted on a 1×0.75×0.062 inch glass epoxy board.
−55~+150
Device Marking
2N7002K = RK
WEITRON
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1/5
Unit
V
V
mA
A
mA
A
mW
°C
°C
02-Mar-10