2N7002K Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

N-Channel Enhancement
3 DRAIN
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE _*
Description:
* Gate
Pretection
Diode
SOURCE 2
The 2N7002K utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extr
nt and cost-e ectiveness device.
The 2N7002K is universally used for all commercial-
industrial applications.
Features:
*Simple Drive Requirement
*Small Package Outline
2N7002K
DRAIN CURRENT
640m AMPERES
DRAIN SOURCE VOLTAGE
60 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(T_A=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current³,V _GS @10V(T_A
I_D
,V _GS @10V(T_A
Pulsed Drain Current^{1, 2}
I _DM
Tota l Po wer Dis s ipation(T_A=25˚C )
P_D
Maximum Junction-ambient ³
R _θJA
Operating Junction Temperature Range
T_J
Storage Temperature Range
T_stg
Gate−Source ESD Rating (HBM, Method 3015)
ESD
Value
60
±20
640
500
950
1.38
90
+150
-55~+150
2500
Unit
V
mA
W
˚C/W
˚C
˚C
V
Device Marking
2N7002K = RK
WEITRON
http:www.weitron.com.tw
1/6
Rev.A 07-Aug-08