2N7002DW Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Dual N-Channel MOSFET
2N7002DW
Features:
*Low On-Resistance : 7.5 Ω
*Low Input Capacitance: 22PF
*Low Out put Capacitance : 11PF
*Low Threshole :1 .5V(TYE)
*Fast Switching Speed : 11ns
3
2
1
4
5
6
6 ₅₄
1
23
SOT-363(SC-88)
Mechanical Data:
*Case: SOT-363, Molded Plastic
*Case Material-UL Flammability Rating 94V-0
*Terminals: Solderable per MIL-STD-202, Method 208
*Weight: 0.006 grams(approx.)
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
V_DS
60
V
Drain-Gate Voltage R_GS<_1.0MΩ
V_DGR
60
V
Gate-Source Voltage
V_GS
±20
V
Continuous Drain Current (TA=25 C)
I_D
115
mA
Power Dissipation (TA=25 C)
P_D
200
mW
Maximax Junction-to-Ambient
R _θJA
625
C/W
Operating Junction and Storage
Temperature Range
T_J, Tstg
-55 to 150
C
Device Marking
2N7002DW=
Note 1:
Pulse Width Limited by Maximum Junction Temperature
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