2N4401 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistor

NPN Silicon General Purpose Transistors
2N4401
TO-92
FEATURES
Power dissipation
P_CM : 0.625 W T amb=25
Collector current
I_CM: 0.6 A
Collector-base voltage
V_(BR)CBO : 60
V
Operating and storage junction temperature range
T_JT _stg: -55 to +150
1
1. EMITTER
2. BASE
2
3
3. COLLECTOR
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
unless otherwise specified
Symbol Test conditions
MIN
V(BR)CBO Ic=100 A , IE=0
60
V(BR)CEO IC= 1mA , IB=0
40
V(BR)EBO IE=100 A, IC=0
6
ICBO
VCB=50 V , IE=0
ICEO
VCE=35 V , IB=0
IEBO
VEB=5V , IC=0
hFE 1 _{VCE=1 V, IC= 150m A}
100
VCE(sat)
IC=150 mA, IB=15m A
VBE(sat)
IC= 150 mA, IB=15m A
VCE= 10V, IC= 20mA
fT
250
f = 100MHz
MAX UNIT
V
V
V
0.1
A
0.1
A
0.1
A
300
0.4
V
0.95
V
MHz
WEITRON
http://www.weitron.com.tw