WCFS4008V1C Datasheet, PDF (2/9 Pages) Weida Semiconductor, Inc. – 512K x 8 Static RAM

WCFS4008V1C
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65×C to +150×C
Ambient Temperature with
Power Applied............................................–55×C to +125×C
Supply Voltage on V_CC to Relative GND^[1] .... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State^[1] ....................................–0.5V to V_CC + 0.5V
Electrical Characteristics Over the Operating Range
DC Input Voltage^[1] ................................ –0.5V to V_CC + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Operating Range
Range
Commercial
Ambient
Temperature
0°C to +70°C
V_CC
3.3V ± 0.3V
Parameter
Description
V_OH
Output HIGH Voltage
V_OL
Output LOW Voltage
V_IH
Input HIGH Voltage
V_IL
Input LOW Voltage^[1]
I_IX
Input Load Current
I_OZ
Output Leakage
Current
I_CC
V_CC Operating
Supply Current
I_SB1
Automatic CE
Power-Down Current
—TTL Inputs
I_SB2
Automatic CE
Power-Down Current
—CMOS Inputs
Test Conditions
V_CC = Min.,
I_OH = –4.0 mA
V_CC = Min.,
I_OL = 8.0 mA
GND < V_I < V_CC
GND < V_OUT < V_CC,
Output Disabled
V_CC = Max.,
f = f_MAX = 1/t_RC
Max. V_CC, CE > V_IH
V_IN > V_IH or
V_IN < V_IL, f = f_MAX
Max. V_CC,
CE > V_CC – 0.3V,
V_IN > V_CC – 0.3V,
or V_IN < 0.3V, f = 0
Comm’l
Comm’ll
WCFS4008V1C 12ns
Min.
Max.
2.4
0.4
2.0
–0.3
–1
–1
V_CC
+ 0.3
0.8
+1
+1
85
40
10
Unit
V
V
V
V
µA
µA
mA
mA
mA
Capacitance^[2]
Parameter
Description
Test Conditions
C_IN
C_OUT
Input Capacitance
I/O Capacitance
T_A = 25°C, f = 1 MHz,
V_CC = 3.3V
Note:
1. V_IL (min.) = –2.0V for pulse durations of less than 20 ns
2. Tested initially and after any design or process changes that may affect these parameters.
Max.
Unit
8
pF
8
pF
2