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WV3HG64M64EEU-D4 Datasheet, PDF (4/11 Pages) White Electronic Designs Corporation – 512MB - 64Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM
White Electronic Designs
WV3HG64M64EEU-D4
ADVANCED
Symbol
VCC
VIN, VOUT
TSTG
IL
IOZ
IVREF
ABSOLUTE MAXIMUM RATINGS
Parameter
Min
Voltage on VCC pin relative to VSS
-0.5
Voltage on any pin relative to VSS
-0.5
Storage Temperature
-55
Input leakage current; Any input 0V<VIN<VCC; VREF iput
0V<VIN<0.95V; Other pins not under test = 0V
Command/Address,
-80
RAS#, CAS#, WE#
CS#, CKE
-40
CK, CK#
-20
DM
-5
Output leakage current; 0V<VIN<VCC; DQs and ODT are
DQ, DQS, DQS#
-5
disable
VREF leakage current; VREF = Valid VREF level
-16
Max
Units
2.3
V
2.3
V
100
˚C
80
uA
40
uA
20
uA
5
uA
5
uA
16
uA
DC OPERATING CONDITIONS
All voltages referenced to VSS
Rating
Parameter
Symbol
Min.
Type
Max.
Units
Notes
Supply Voltage
VCC
1.7
1.8
1.9
V
I/O Reference Voltage
VREF
0.49 x VCC
0.50 x VCC
0.51 x VCC
V
1
I/O Termination Voltage
VTT
VREF-0.04
VREF
VREF+0.04
V
2
Notes:
1. VREF is expected to equal VCC/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +/-1percent of the DC
value. Peak-to-peak AC noise on VREF may not excedd +/-2 persent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.
2. VTT in sot applied directly to the device. VTT is a system supply for signal terminaion resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
May 2006
Rev. 2
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com