WV3EG64M64ETSU-D3 Datasheet, PDF (1/10 Pages) White Electronic Designs Corporation – 512MB - 64Mx64 DDR SDRAM UNBUFFERED

White Electronic Designs
WV3EG64M64ETSU-D3
PRELIMINARY*
512MB – 64Mx64 DDR SDRAM UNBUFFERED
FEATURES
Double-data-rate architecture
PC2700 @ CL 2.5
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input.
Auto and self refresh, (8K/64ms refresh)
Serial presence detect with EEPROM
Power supply:
• VCC = VCCQ = +2.5V ±0.2V
184 pin DIMM package
• D3 PCB height: 28.58mm (1.125")
DESCRIPTION
The WV3EG64M64ETSU is a 64Mx64 Double Data Rate
SDRAM memory module based on 512Mb DDR SDRAM
components. The module consists of eight 64Mx8 DDR
SDRAMs in 66 pin TSOP packages mounted on a 184
pin substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
* This product is under development, is not qualified or characterized and is subject to
change without notice.
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
OPERATING FREQUENCIES
Clock Speed
CL-tRCD-tRP
DDR333 @CL=2.5
166MHz
2.5-3-3
August 2005
Rev. 1
1
White Electronic Designs Corporation • [phone] • www.wedc.com