WV3EG216M64STSU-D4 Datasheet, PDF (1/11 Pages) White Electronic Designs Corporation – 256MB - 2x16Mx64 DDR SDRAM UNBUFFERED

White Electronic Designs ^{WV3EG216M64STSU-D4}
PRELIMINARY*
256MB – 2x16Mx64 DDR SDRAM UNBUFFERED
FEATURES
DESCRIPTION
Double-data-rate architecture
PC2700@CL=2.5
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2,5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh, (8K/64ms refresh)
Serial presence detect with EEPROM
Power Supply: VCC/VCCQ: 2.5V ± 0.20V
Dual Rank
Standard 200 pin SO-DIMM package
• Package height options:
D4: 31.75mm (1.25")
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
The WV3EG216M64STSU is a 2x16Mx64 Double
Data Rate SDRAM memory module based on 256Mb
DDR SDRAM components. The module consists of
eight 16Mx16 DDR SDRAMs in 66 pin TSOP package
mounted on a 200 Pin FR4 substrate.
Synchronous design allows precise cycle control with
the use of system clock. Data I/O transactions are
possible on both edges and Burst Lenths allow the
same device to be useful for a variety of high bandwidth,
high performance memory system applications.
* This product is under development, is not qualified or characterized and is subject to
change without notice.
OPERATING FREQUENCIES
Clock Speed
CL-tRCD-tRP
DDR333@CL=2.5
166MHz
2.5-3-3
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
December 2005
Rev. 1
1
White Electronic Designs Corporation • [phone] • www.wedc.com