WS1M8V-XCX Datasheet, PDF (1/5 Pages) White Electronic Designs Corporation – 2x512Kx8 DUALITHICTM SRAM

White Electronic Designs
WS1M8V-XCX
ADVANCED*
2x512Kx8 DUALITHIC™ SRAM
FEATURES
■ Access Times 17, 20, 25, 35, 45, 55ns
■ Evolutionary, Corner Power/Ground Pinout
■ Packaging:
• 32 pin, Hermetic Ceramic DIP (Package 300)
■ Organized as two banks of 512Kx8
■ Commercial, Industrial and Military Temperature
Ranges
■ 3.3V Power Supply
■ Low Power CMOS
■ TTL Compatible Inputs and Outputs
■ Output Enable Internally tied to GND.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
PIN CONFIGURATION FOR WS1M8V-XCX
32 DIP
TOP VIEW
A18 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
GND 16
32 VCC
31 A15
30 A17
29 WE#
28 A13
27 A8
26 A9
25 A11
24 CS2#
23 A10
22 CS1#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
PIN DESCRIPTION
A0-18
I/O0-7
CS#1-2
WE#
VCC
GND
Address Inputs
Data Input/Output
Chip Selects
Write Enable
+3.3V Power Supply
Ground
BLOCK DIAGRAM
I/O0-7
WE#
A0-18
512K x 8
512K x 8
(1)
CS1#
(1)
CS2#
NOTE:
1. CS#1 and CS#2 are used to select the lower and upper 512Kx8 of the
device. CS#1 and CS#2 must not be enabled at the same time.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
October, 2002
Rev. 2
1
White Electronic Designs Corporation • [phone] • www.wedc.com