1N914 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diode

Switching Diode
1N914/1N914A/1N914B
Switching Diode
Features
• Fast switching speed
• Electrically indentical to standard JEDEC
• High Conductance
• Axial lead package ideally suited for automatic insertion
DO-35
Mechanical Data
• Case: Molded Glass DO-35
• Terminals: Solderable per MIL-STD-202E, Method 208
• Polarity: Color band denotes cathode
• Mounting position: Any
• Approx. Weight: approx. 0.13 gram
Maximum Ratings and Electrical Characteristics TA=25°C unless otherwise specified
Symbol
V_R
V_RM
V_RMS
I_AV
I_FSM
P_TOT
V_F
Parameters
Reverse Voltage
Peak Reverse Voltage
RMS Voltage
Maximum Average
Forward Current
Surge Forward Current
Power Dissipation
Maximum
Min
Forward
Voltage
Max
I_R
Maximum Leakage
Current
C_J
Maximum Capacitance
(Note 1)
T_RR
Maximum Reverse
Recovery Time
T_J, T_STG
Junction and Storage
Temperature Range
1N914
---
1.0 @
10mA
1N914A
75
100
50
150
500
500
---
1.0 @
20mA
25
5.0
4
1N914B
0.62 @ 5mA
0.72 @ 5mA
1.0 @ 100mA
Unit
V
V
V
mA
mA
mW
Volts
nA
µA
pF
4
ns
-65 to +175
°C
Condition
at f ≥ 50Hz
at tp< 1s
at V_R = 20V
at V_R = 75V
VR=0, f=1MHz
IF=10mA to IR
=1mA, VR =6V,
RL=100Ω
°C
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Rev. B/NX 2007-08-31
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