VG3664321412BT Datasheet, PDF (1/72 Pages) Vanguard International Semiconductor – CMOS Synchronous Dynamic RAM

VIS
Description
Preliminary
VG3664321(4)1(2)BT
CMOS Synchronous Dynamic RAM
The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 -
bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced
submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is
packaged in JEDEC standard pinout and standard plastic TSOP package.
Features
• Single 3.3V (±0.3V ) power supply
• High speed clock cycle time : 8/10 for LVTTL
• High speed clock cycle time : 8/10 for SSTL - 3
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS Iatency (2,3)
• Programmable burst length (1,2,4,8,& Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Dual Internal banks controlled by A11 (Bank select) for VG36643211(2)
• Quad Internal banks controlled by A11 & A12 (Bank select) for VG36643241(2)
• Each Banks can operate simultaneously and independently
• LVTTL compatible I/O interface for VG36643211 and VG36643241
• SSTL - 3 compatible I/O interface for VG36643212 and VG36643242
• Random column access in every cycle
• x32 organization
• Input/Output controlled by DQM0 ~ 3
• 4,096 refresh cycles/64ms
• Burst termination by burst stop and precharge command
• Burst read/single write option
Document : 1G5-0099
Rev.1
Page 1