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VG36641641BT Datasheet, PDF (1/70 Pages) Vanguard International Semiconductor – CMOS Synchronous Dynamic RAM | |||
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VIS
Description
Preliminary
VG36641641BT
CMOS Synchronous Dynamic RAM
The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is
fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package.
Features
⢠Single 3.3V (±0.3V ) power supply
⢠High speed clock cycle time : 8/10ns
⢠Fully synchronous with all signals referenced to a positive clock edge
⢠Programmable CAS Iatency (2,3)
⢠Programmable burst length (1,2,4,8,&Full page)
⢠Programmable wrap sequence (Sequential/Interleave)
⢠Automatic precharge and controlled precharge
⢠Auto refresh and self refresh modes
⢠Quad Internal banks controlled by A12 & A13 (Bank select)
⢠Each Bank can operate simultaneously and independently
⢠LVTTL compatible I/O interface
⢠Random column access in every cycle
⢠X16 organization
⢠Input/Output controlled by LDQM and UDQM
⢠4,096 refresh cycles/64ms
⢠Burst termination by burst stop and precharge command
⢠Burst read/single write option
The information shown is subject to change without notice.
Document : 1G5-0127
Rev2
Page 1
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