VG3617801CT Datasheet, PDF (1/68 Pages) Vanguard International Semiconductor – 16Mb CMOS Synchronous Dynamic RAM

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VG3617801CT
16Mb CMOS Synchronous Dynamic RAM
Description
The VG3617801CT is CMOS Synchronous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2-
bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a sin-
gle 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.
Features
• Single 3.3V(±0.3V ) power supply
• Clock Frequency:100MHz
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS Iatency (2,3)
• Programmable burst length (1,2,4,8,& Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Dual Internal banks controlled by A11(Bank select)
• Simultaneous and independent two bank operation
• I/O level : LVTTL interface
• Random column access in every cycle
• X8 organization
• Input/output control by DQM
• 2048 refresh cycles/32ms
• Burst termination by burst stop and precharge command
• Burst read single write option
Document:1G5-0133
Rev.1
Page 1