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VG26VS18165C Datasheet, PDF (1/27 Pages) Vanguard International Semiconductor – 1,048,576 x 16 - Bit CMOS Dynamic RAM | |||
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Description
VG26(V)(S)18165C
1,048,576 x 16 - Bit
CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,
portable electronic application. A new refresh feature called âself-refreshâ is supported and very slow CBR
cycles are being performed. lt is packaged in JEDEC standard 42-pin plastic SOJ.
Features
⢠Single 5V(±10 %) or 3.3V(±10 %) only power supply
⢠High speed tRAC acess time: 50/60ns
⢠Low power dissipation
- Active wode : 5V version 660/605 mW (Mas)
3.3V version 432/396 mW (Mas)
- Standby mode: 5V version 1.375 mW (Mas)
3.3V version 0.54 mW (Mas)
⢠Extended - data - out(EDO) page mode access
⢠I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
⢠1024 refresh cycle in 16 ms(Std.) or 128 ms(S-version)
⢠4 refresh modes:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh(S-version)
Document:1G5-0147
Rev.1
Page 1
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