VSC7807 Datasheet, PDF (1/10 Pages) Vitesse Semiconductor Corporation – Photodetector/Transimpedance Amplifier Family for Optical Communication

VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7807
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Features
• Integrated Photodetector/Transimpedance Amplifier
Optimized for High-Speed Optical Communications
Applications
• Fibre Channel/Gigabit Ethernet-Compatible
• High Bandwidth: 1300MHz
• Low Input Noise Equivalent Power: 2.2µW
• Large Optically Active Area
• Single 3.3V Power Supply
• 2.125Gb/s Data Rate
• 70µm Optically Active Area
• Packages: TO-46, TO-56, Bare Die
Applications
• Gigabit Ethernet Optical Receivers
• Fibre Channel Optical Receivers
• ATM Optical Receivers
• SONET/SDH
• System Interconnect
General Description
The VSC7807 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution
for converting 850nm light from a fiber optic communications channel into a differential output voltage. The
benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high
bandwidth and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty
cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. The
VSC7807 is available in either die form, flat-windowed packages or ball-lens packages.
By using a Metal-Semiconductor-Metal (MSM) photodetector with a monolithic integrated transimpedance
amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photo-
detectors. Integration also allows superior tracking over process, temperature and voltage between the photode-
tector and the amplifier, resulting in higher performance. The VSC7807 can easily be used in developing Fibre
Channel Electro-Optic Receivers which exhibit very high performance and ease of use.
VSC7807 Block Diagram
+3.3V
DOUTP
DOUTN
Both DOUTP and DOUTN are back-terminated to 25Ω.
G52363-0, Rev 2.1
04/05/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]
Internet: www.vitesse.com
Page 1