SI4914BDY Datasheet, PDF (9/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
Si4914BDY
Vishay Siliconix
0.08
10
0.06
T_J = 150 °C
1
T_J = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10-1
10^-2
V_DS = 20 V
V_DS = 30 V
10^-3
10^-4
V_DS = 10 V
0.04
0.02
T_A = 125 °C
T_A = 25 °C
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
10^-5
20
10^-6
0
25
50
75
100 125 150
T_J - Temperature (°C)
Reverse Current Schottky
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
1
10 ms
0.1
T_A = 25 °C
Single Pulse
0.01
0.1
1
100 ms
1s
10 s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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