SI1553CDL Datasheet, PDF (9/16 Pages) Vishay Siliconix – N- and P-Channel 20 V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
2
Si1553CDL
Vishay Siliconix
I_D = 0.4 A
1.5
T_J = 150 °C
1
1
T_J = 125 °C
T_J = 25 °C
T_J = 25 °C
0.5
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
6.4
1.05
4.8
0.9
I_D = 250 μA
3.2
0.75
1.6
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by R_DS(on)*
1
1 ms
0.1
10 ms
100 ms
1s
0.01
10 s, DC
T_C = 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67693
www.vishay.com
S11-0868-Rev. A, 02-May-11
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000