IRF9Z22 Datasheet, PDF (8/9 Pages) Vishay Siliconix – Power MOSFET

IRF9Z22, SiHF9Z22
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
R_G
• dV/dt controlled by R_G
+
• I_SD controlled by duty factor "D"
- ^VDD
• D.U.T. - device under test
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
V_GS = - 10 V*
D.U.T. I_SD waveform
Reverse
recovery
Body diode forward
current
current
dI/dt
D.U.T. V_DS waveform
Diode recovery
dV/dt
V_DD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
I_SD
* V_GS = - 5 V for logic level and - 3 V drive devices
Fig. 20 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91350.
www.vishay.com
8
Document Number: 91350
S-Pending-Rev. A, 10-Jun-08