SI7102DN Datasheet, PDF (7/14 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si7102DN
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
10^{- 3}
1
Duty Cycle = 0.5
Single Pulse
Notes:
P _DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 65 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^{- 2}
10^{- 1}
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.2
0.1
0.1 ^0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74250.
Document Number: 74250
S-83044-Rev. B, 22-Dec-08
www.vishay.com
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