SD823C12S20C Datasheet, PDF (7/11 Pages) Vishay Siliconix – Fast Recovery Diodes (Hockey PUK Version), 810/910 A

Fast Recovery Diodes
(Hockey PUK Version),
810/910 A
6
SD823C..S20C Series
5.5
T_J= 150 °C; Vr > 100V
5
I_FM = 1000 A
4.5
Sine Pulse
4
500 A
150 A
3.5
3
2.5
2
10
100
1000
Rate Of Fa ll Of Forward Current - di/ dt (A/ µs)
Fig. 22 - Recovery Time Characteristics
SD823C..C Series
Vishay High Power Products
7
6.5
SD823C..S30C Series
T_J= 150 °C; Vr > 100V
6
5.5
I_FM = 1000 A
5
Sine Pulse
4.5
500 A
150 A
4
3.5
3
2.5
2
10
100
1000
Rate Of Fall Of Forward Current - d i/d t (A/ µs)
Fig. 25 - Recovery Time Characteristics
800
I_FM = 1000 A
700
Sine Pulse
600
500
500 A
400
150 A
300
200
SD823C..S20C Series
100
T_J= 150 °C; Vr > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 23 - Recovery Charge Characteristics
1200
1000
I_FM = 1000 A
Sine Pulse
800
500 A
600
150 A
400
200
SD823C..S30C Series
T_J= 150 °C; Vr > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 26 - Recovery Charge Characteristics
450
400
I_FM = 1000 A
Sine Pulse
350
500 A
300
150 A
250
200
150
100
SD823C..S20C Series
50
T_J= 150 °C; Vr > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 24 - Recovery Current Characteristics
550
500
I_FM = 1000 A
Sine Pulse
450
500 A
400
350
150 A
300
250
200
150
100
SD823C..S30C Series
50
T_J = 150 °C; Vr > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - d i/ dt (A/ µs)
Fig. 27 - Recovery Current Characteristics
Document Number: 93181
Revision: 14-May-08
For technical questions, contact: [e-mail]
www.vishay.com
7