SD603C04S10C Datasheet, PDF (7/10 Pages) Vishay Siliconix – SD603C04S10C

SD603C..C Series
Fast Recovery Diodes _{Vishay High Power Products}
(Hockey PUK Version), 600 A
4.5
SD603C..S20C Series
T_J= 125 °C; V _r = 30V
4
3.5
I_FM = 1000 A
Sq uare Pulse
3
500 A
2.5
250 A
2
10
100
Rate Of Fa ll Of Forward Current - di/ dt (A/ µs)
Fig. 18 - Recovery Time Characteristics
200
180
I _FM = 1000 A
Sq uare Pulse
160
140
500 A
120
100
250 A
80
60
SD603C..S20C Series
T_J= 125 °C; Vr = 30V
40
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 19 - Recovery Charge Characteristics
150
140
I_FM = 1000 A
130
Square Pulse
120
110
100
500 A
90
80
250 A
70
60
50
40
SD603C..S20C Series
30
T_J= 125 °C; Vr = 30V
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 20 - Recovery Current Characteristics
1E4
1E3
1E2
1E1
1E1
20 joules per pulse
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
20 joulesper pulse
10
4
2
1
0.4
0.2
0.1
SD603C..S10C Series
Sinusoidal Pulse
tp
TJ= 125°C, VRRM = 1120V
dv/ dt = 1000V/ µs
SD603C..S10C Series
Trapezoidal Pulse
TJ= 125°C, VRRM = 1120V
tp
d v/ dt = 1000V/ µs; di/ dt=50A/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
Document Number: 93178
Revision: 04-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
7