SD453NR Datasheet, PDF (7/11 Pages) Vishay Siliconix – Fast Recovery Diodes (Stud Version), 400/450 A

SD453N/R Series
Fast Recovery Diodes _{Vishay High Power Products}
(Stud Version), 400/450 A
1200
1000
800
600
400
I_FM = 1000 A
Sine Pulse
500 A
150 A
200
SD453N/ R..S30 Series
T_J = 150 °C; V_r > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 22 - Recovery Charge Characteristics
550
500
I_FM = 1000 A
Sine Pulse
450
400
500 A
350
150 A
300
250
200
150
100
SD453N/ R..S30 Series
T_J= 150 °C; V_r > 100V
50
0
0 50 100 150 200 250 300
Rate Of Fa ll Of Forwa rd Current - d i/ dt (A/ µs)
Fig. 23 - Recovery Current Characteristics
1E4
2
1
0.6
10 joules per p ulse
46
0.4
1E3
0.2
0.1
1E2
1E1
SD453N/ R..S20 Series
Sinusoidal Pulse
TJ = 150°C, VRRM = 800V
tp
dv/ dt = 1000V/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 24 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
1000
1500
600
400
200
100
50 Hz
2000
3000
4000
6000
SD453N/R..S20 Series
Sinusoidal Pulse
T_C= 70°C, V_RRM = 800V
tp
dv/ d t = 1000V/ us
10000
1E2
1E1
1E4
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 25 - Frequency Characteristics
10 joules per pulse
6
4
2
1
0.8
1E3
0.6
0.4
SD453N/ R..S20 Series
Trapezoidal Pulse
tp
T_J = 150°C, VRRM = 800V
dv/ dt = 1000V/ µs; d i/ dt = 300A/ µs
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 26 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
tp
1E3
1E2
1E1
600 ^{400 200}
1000
1500
100 _{50 Hz}
2000
3000
4000
6000
SD453N/R..S20 Series
Tra pezoidal Pulse
T_C= 70°C, V_RRM = 800V
d v/ dt = 1000V/us,
d i/ dt = 300A/ us
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 27 - Frequency Characteristics
Document Number: 93176
Revision: 08-Apr-08
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