SD1053C18S20L_12 Datasheet, PDF (7/12 Pages) Vishay Siliconix – Fast Recovery Diodes (Hockey PUK Version), 920/1050 A

Fast Recovery Diodes
(Hockey PUK Version),
920/1050 A
6.5
SD1053C..S20L Series
6
T_J= 150 °C; V_r > 100V
5.5
5
I _FM= 1500 A
Sine Pulse
4.5
1000 A
4
500 A
3.5
3
2.5
10
100
1000
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 22 - Recovery Time Characteristics
SD1053C..L Series
Vishay High Power Products
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8.5
SD1053C..S30L Series
T_J= 150 °C; V _r > 100V
8
7.5
7
6.5
6
I_FM = 1500 A
5.5
Sine Pulse
5
1000 A
4.5
500 A
4
3.5
10
100
1000
Rate Of Fa ll Of Forward Current - di/ dt (A/ µs)
Fig. 25 - Recovery Time Characteristics
1000
900
800
700
I _FM= 1500 A
Sine Pulse
1000 A
600
500 A
500
400
300
200
SD1053C..S20L Series
100
T_J = 150 °C; Vr > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/µs)
Fig. 23 - Recovery Charge Characteristics
1600
1400
1200
1000
I_FM = 1500 A
Sine Pulse
1000 A
500 A
800
600
400
200
0
0
SD1053C..S30L Series
T_J= 150°C; Vr > 100V
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 26 - Recovery Charge Characteristics
500
450
IFM= 1500 A
Sine Pulse
400
1000 A
350
500 A
300
250
200
150
100
SD1053C..S20L Series
50
T_J= 150 °C; V_r > 100V
0
0 50 100 150 200 250 300
Rate Of Fa ll Of Forward Current - d i/ dt (A/ µs)
Fig. 24 - Recovery Current Characteristics
700
I_FM = 1500 A
600
Sine Pulse
1000 A
500
500 A
400
300
200
100
SD1053C..S30L Series
T_J= 150°C; V_r > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 27 - Recovery Current Characteristics
Document Number: 93167
Revision: 14-May-08
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