DG2034_08 Datasheet, PDF (7/8 Pages) Vishay Siliconix – Single 4:1 Low rON Multiplexers

TEST CIRCUITS
R_g
COM
V_g
IN
GND
V_IN = 0 - V+
DG2034
Vishay Siliconix
V+
V+
NO or NC
V_O
C_L
1 nF
ΔV_O
V_O
IN
OFF
ON
OFF
Q = ΔV_O x C_L
IN dependent on switch configuration Input polarity determined
by sense of switch.
Figure 4. Charge Injection
V+
C
V_S
V_IN NO or NC
R_g = 50 Ω
IN
0 V or 2.4 V
V_OUT
NC or NO
V+
COM
50 Ω
R_g = 50 Ω
0 V, 2.4 V
GND
X_TALK Isolation = 20 log
C = RF bypass
V_OUT
V_IN
Figure 5. Crosstalk
V+
C
NO or NC
COM
IN
R_L
50 Ω
GND
Off Isolation = 20 log
C = RF Bypass
V_COM
V_NO/NC
Figure 6. Off Isolation
V+
C
V+
COM
IN
0 V, 2.4 V
GND
NO or NC
Meter
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 7. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72418.
Document Number: 72418
S-80164-Rev. D, 28-Jan-08
www.vishay.com
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