VS-ST230SPBF Datasheet, PDF (6/8 Pages) Vishay Siliconix – Phase Control Thyristors (Stud Version), 230 A

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VS-ST230SPbF Series
Vishay Semiconductors
100
Rectangular gate pulse
a) Recommended load line for
rated dI_F/dt : 20 V, 10 Ω; t_r <=1 μs
b) Recommended load line for
10
< = 30 % rated dI_F/dt : 10 V, 10 Ω
t_r < = 1 μs
(a)
(b)
(1) PGM = 10 W, t_p = 4 ms
(2) PGM = 20 W, t_p = 2 ms
(3) PGM = 40 W, t_p = 1 ms
(4) PGM = 60 W, t_p = 0.66 ms
1
0.1
0.001
VGD
IGD
Device: ST230S Series
(1) (2) (3) (4)
Frequency Limited by PG (AV)
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code _{VS- ST 23 0 S 16 P 0 V PbF}
Dimensions
1
2
3
4
5
6
7
8
9 10
1 - Vishay Semiconductors product
2 - Thyristor
3 ^{- Essential part number}
4 ^{- 0 = Converter grade}
5 ^{- S = Compression bonding stud}
6 ^{- Voltage code x 100 = V}RRM ^{(see Voltage Ratings table)}
7 ^{- P = Stud base 3/4"-16UNF2A threads}
8 ^{- 0 = Eyelet terminals (gate and auxiliary cathode leads)}
1 = Fast-on terminals (gate and auxiliary cathode leads)
9^-
V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
10 - Lead (Pb)-free
Note: For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95082
Revision: 05-Mar-12
6
Document Number: 94399
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