SST4416-E3 Datasheet, PDF (6/7 Pages) Vishay Siliconix – N-Channel JFETs

2N4416/2N4416A/SST4416
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance
10
T_A = 25_C
V_DS = 15 V
V_GS = 0 V
–b_rs
Common Source
Output Admittance
10
b_os
1
1
g_os
–g_rs
0.1
0.01
100
200
500
f – Frequency (MHz)
1000
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
Gate Leakage Current
I_G @ I_D = 5 mA
1 mA
T_A = 125_C
0.1 mA
5 mA
T_A = 25_C
I_GSS
@
125_C
1 mA
0.1 mA
I_GSS @ 25_C
0.1
0.01
100
T_A = 25_C
V_DS = 15 V
V_GS = 0 V
Common Source
200
500
f – Frequency (MHz)
1000
Common-Source Forward
Transconductance vs. Drain Current
10
V_GS(off) = –3 V
V_DS = 10 V
f = 1 kHz
8
T_A = –55_C
6
25_C
4
125_C
2
0.1 pA
0
4
8
12
16
20
V_DG – Drain-Gate Voltage (V)
0
0.1
1
10
I_D – Drain Current (mA)
Equivalent Input Noise Voltage vs. Frequency
20
V_DS = 10 V
16
12
Output Conductance vs. Drain Current
20
V_GS(off) = –3 V
V_DS = 10 V
f = 1 kHz
16
T_A = –55_C
12
8
4
0
10
V_GS = 0 V
I_D = 5 mA
100
1k
10 k
f – Frequency (Hz)
100 k
25_C
8
125_C
4
0
0.1
1
10
I_D – Drain Current (mA)
www.vishay.com
7-6
Document Number: 70242
S-04028—Rev. F, 04-Jun-01