SI7668ADP Datasheet, PDF (6/14 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7668ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
150
120
90
60
Package Limited
30
0
0
100
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
80
60
40
20
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Case
100
10
1
T_A =
L ^. I_D
BV - V_DD
0.1
0.00001 0.0001 0.001 0.01
0.1
1
T_A - Time In Avalanche (s)
Single Pulse Avalanche Capability
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
www.vishay.com
6
Document Number: 73326
S-83053-Rev. B, 29-Dec-08