SI4542DY Datasheet, PDF (6/7 Pages) Fairchild Semiconductor – 30V Complementary PowerTrench MOSFET

Si4542DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
40
0.20
T_J = 150 °C
10
T_J = 25 °C
0.16
0.12
0.08
I_D = 6.1 A
0.04
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.6
I_D = 250 µA
0.4
0.2
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.01
0.10
1.00
Time (s)
Single Pulse Power
10.00
0.2
0.1
0.1
0.05
0.02
0.01
10- ⁴
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 62.5 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10- ³
10- ²
10- ¹
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
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reliability data, see www.vishay.com/ppg?70666.
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6
Document Number: 70666
S09-0868-Rev. G, 18-May-09