IRF9520 Datasheet, PDF (6/9 Pages) Intersil Corporation – 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

IRF9520, SiHF9520
Vishay Siliconix
V_DS
Vary t_p to obtain
required I_AS
R_G
- 10 V
t_p
L
D.U.T
I_AS
0.01 Ω
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
I_AS
V_DS
V_DD
t_p
V_DS
Fig. 12b - Unclamped Inductive Waveforms
1000
800
600
I_D
Top - 2.8 A
- 4.8 A
Bottom - 6.8 A
400
200
0 ^{VDD = - 25 V}
25
50
75
100 125 150 175
91074_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
- 10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
-
D.U.T. ^{+ VDS}
V_GS
- 3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91074
S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000