GB05XP120KTPBF Datasheet, PDF (6/10 Pages) Vishay Siliconix – Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A

GB05XP120KTPbF
Vishay Semiconductors ^{Three Phase Inverter Module in MTP Package}
1200 V NPT IGBT and HEXFRED^® Diodes, 5 A
50
40
Tj = 25°C
Tj = 125°C
30
20
10
26
Rg=4.7Ω
Rg=10Ω
21
Rg=22Ω
16
11
Rg=47Ω
0
0
4
8
12
16
Vge (V)
Fig. 15 - Typical Transfer Characteristics
V_CE = 50 V; t_p = 10 μs
20
Tj = 25°C
Tj = 125°C
15
10
5
6
2 4 6 8 10 12 14 16
If (A)
Fig. 17 - Typical Diode I_rr vs. I_F
T_J = 125 °C
19
17
15
13
11
0
0
1
2
3
4
5
Vf (V)
Fig. 16 - Typical Diode Forward Characteristics
t_p = 80 μs
19
9
0
10
20
30
40
50
Rg ( )
Fig. 18 - Typical Diode I_rr vs. R_g
T_J = 125 °C; I_F = 10 A
17
15
13
11
9
300
360
420
480
dif/dt (A/µs)
Fig. 19 - Typical Diode I_rr vs. dI_F/dt; V_CC = 600 V;
V_GE = 15 V; I_CE = 10 A, T_J = 125 °C
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6
For technical questions within your region, please contact one of the following: Document Number: 93912
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Revision: 03-Aug-10