DG411L_11 Datasheet, PDF (6/14 Pages) Vishay Siliconix – Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches

DG411L, DG412L, DG413L
Vishay Siliconix
SPECIFICATIONS^a (Single Supply 3 V)
Parameter
Analog Switch
Analog Signal Range^e
Drain-Source
On-Resistance
Switch Off
Leakage Current^g
Channel On
Leakage Current^g
Digital Control
Symbol
Test Conditions
A Suffix Limits D Suffix Limits
Unless Otherwise Specified
- 55 °C to 125 °C - 40 °C to 85 °C
V+ = 3 V, V- = 0 V
V_L = 3 V, V_IN = 0.4 V^f
Temp.^b Typ.^c Min.^d Max.^d Min.^d Max.^d Unit
V_ANALOG
R_DS(on)
I_S(off)
I_D(off)
I_D(on)
V+ = 2.7 V, V- = 0 V
I_S = 5 mA, V_D = 0.5, 2.2 V
V+ = 3.3 , V- = 0 V
V_D = 1, 2 V, V_S = 2, 1 V
V+ = 3.3 V, V- = 0 V
V_S = V_D = 1, 2 V
Full
Room 65
Full
Room
Full
Room
Full
Room
Full
0
3
0
3
V
80
115
80
100

-1
1
-1
1
- 15
15
- 10
10
-1
- 15
1
15
-1
- 10
1
10
nA
-1
1
-1
1
- 15
15
- 10
10
Input Current, V_IN Low
I_IL
Input Current, V_IN High
I_IH
Dynamic Characteristics
V_IN under test = 0.4 V
V_IN under test = 2.4 V
Full 0.005 - 1.5 1.5
-1
1
µA
Full 0.005 - 1.5 1.5
-1
1
Turn-On Time
Turn-Off Time
t_ON
R_L = 300 , C_L = 35 pF
Room 50
Full
t_OFF
V_S = 1.5 V, see figure 2
Room 30
Full
85
85
150
110
60
100
60
85
ns
Break-Before-Make Time
Delay
t_D
DG413L only, V_S = 1.5 V
R_L = 300 , C_L = 35 pF
Room 6
Charge Injection^e
Q
V_g = 0 V, R_g = 0 , C_L = 10 nF Room
1
pC
Off Isolation^e
OIRR
Room 68
Channel-to-Channel
Crosstalk^e
X_TALK
R_L = 50 , C_L = 5 pF , f = 1 MHz _Room
85
dB
Source Off Capacitance^e
C_S(off)
Room 6
Drain Off Capacitance^e
C_D(off)
f = 1 MHz
Room 6
pF
Channel On Capacitance^e
C_D(on)
Room 20
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V_IN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71397
S11-0179-Rev. F, 07-Feb-11