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DG411L_08 Datasheet, PDF (6/11 Pages) Vishay Siliconix – Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches
DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 3 V)
Parameter
Analog Switch
Symbol
Test Conditions
A Suffix Limits D Suffix Limits
Unless Otherwise Specified
- 55 to 125 °C - 40 to 85 °C
V+ = 3 V, V- = 0 V
VL = 3 V, VIN = 0.4 Vf
Tempb Typc Mind Maxd Mind Maxd Unit
Analog Signal Rangee
VANALOG
Full
0
3
0
3
V
Drain-Source
On-Resistance
Switch Off
Leakage Currentg
rDS(on)
IS(off)
ID(off)
V+ = 2.7 V, V- = 0 V
IS = 5 mA, VD = 0.5, 2.2 V
V+ = 3.3 , V- = 0 V
VD = 1, 2 V, VS = 2, 1 V
Room 65
Full
Room
Full
Room
Full
80
115
80
100
Ω
-1
1
-1
1
- 15
15
- 10
10
-1
1
-1
1
- 15
15
- 10
10
nA
Channel On
Leakage Currentg
Digital Control
ID(on)
V+ = 3.3 V, V- = 0 V
VS = VD = 1, 2 V
Room
Full
-1
1
-1
1
- 15
15
- 10
10
Input Current, VIN Low
IIL
Input Current, VIN High
IIH
Dynamic Characteristics
VIN Under Test = 0.4 V
VIN Under Test = 2.4 V
Full 0.005 - 1.5 1.5
-1
Full 0.005 - 1.5 1.5
-1
1
µA
1
Turn-On Time
Turn-Off Time
tON
RL = 300 Ω, CL = 35 pF
Room 50
Full
tOFF
VS = 1.5 V, See Figure 2
Room 30
Full
85
85
150
110
60
60
100
85
ns
Break-Before-Make Time
Delay
tD
DG413L Only, VS = 1.5 V
RL = 300 Ω, CL = 35 pF
Room 6
Charge Injectione
Q
Vg = 0 V, Rg = 0 Ω, CL = 10 nF Room
1
pC
Off Isolatione
OIRR
Room 68
Channel-to-Channel
Crosstalke
XTALK
RL = 50 Ω, CL = 5 pF , f = 1 MHz
Room
85
dB
Source Off Capacitancee
CS(off)
Room 6
Drain Off Capacitancee
CD(off)
f = 1 MHz
Room 6
pF
Channel On Capacitancee
CD(on)
Room 20
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71397
S-71241–Rev. E, 25-Jun-07