DG3157_09 Datasheet, PDF (6/8 Pages) Vishay Siliconix – High-Speed, Low RON, SPDT Analog Switch

DG3157
Vishay Siliconix
TEST CIRCUITS
V+
B₁
B₁
B₀
B₀
S
V+
A
GND
R_L
50 Ω
V_O
C_L
35 pF
Logic
Input
V_SH
V_SL
VB_{0 =} VB₁
V_O
Switch _{0 V}
Output
90 %
t_D
t_r < 5 ns
t_f < 5 ns
t_D
C_L (includes fixture and stray capacitance)
Figure 4. Break-Before-Make Interval
V+
V_gen
R_gen
B_X
+
S
V_IN = 0 – V+
V+
GND
A
V_A
V_OUT
OUT
C_L = 1 nF
V_S
On
Off
On
Q = _OUT x C_L
Figure 5. Charge Injection
IN depends on switch configuration: input polarity
determined by sense of switch.
V+
10 nF
V+
B_X
COM _A
R_L
GND
Analyzer
V_A
Off Isolation = 20 log _VBx
Figure 6. Off-Isolation
S ^{0 V, 2.4 V}
V+
10 nF
V+
A
S
0 V, 2.4 V
B_X
GND
Meter
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 7. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72648.
www.vishay.com
6
Document Number: 72648
S09-0294-Rev. D, 23-Feb-09