DG213 Datasheet, PDF (6/8 Pages) TEMIC Semiconductors – Quad Complementary CMOS Analog Switch

DG213
Vishay Siliconix
TEST CIRCUITS
+5 V
+15 V
V_L
V_S1
S₁
IN₁
V_S2
S₂
IN₂
GND
V+
D₁
V_O1
D₂
V_O2
V–
–15 V
R_L2
300 W
C_L2
35 pF
R_L1
300 W
C_L1
35 pF
C_L (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make
Logic
3V
Input
0V
V_S1
V_O1
Switch
0V
Output
V_S2
V_O2
Switch
0V
Output
50%
90%
90%
t_D
t_D
+15 V
C
V+
V_S
S
D
V_O
R_g = 50 W
IN
R_L
0V, 2.4 V
GND
V–
C
V_S
Off Isolation = 20 log
V_O
–15 V
FIGURE 4. Off Isolation
C
+15 V
V+
V_S
S₁
D₁
R_g = 50 W
IN₁
0V, 2.4 V
S₂
D₂
NC
0V, 2.4 V
IN₂
C = RF bypass
V_S
X_TALK Isolation = 20 log
V_O
GND
V–
C
–15 V
50 W
V_O
R_L
FIGURE 5. Channel-to-Channel Crosstalk
R_g
V_g
3V
+15 V
V+
S
D
IN
GND
V–
–15 V
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4-6
V_O
C_L
1000 pF
DV_O
V_O
IN_X ON
OFF
ON
DV_O = measured voltage error due to charge injection
The charge injection in coulombs is Q = C_L x DV_O
FIGURE 6. Charge Injection
Document Number: 70662
S-00787—Rev. F, 17-Apr-00