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DG183 Datasheet, PDF (6/9 Pages) TEMIC Semiconductors – High-Speed Drivers with Dual DPST JFET Switches
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DG183/184/185
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Current vs. Temperature
5
100
4
80
IIN vs. VIN and Temperature
VINL = 0
VINH = 5 V
3
IL
–I–
2
–IR
1
I+
0
–55 –35 –15
5 25 45 65
Temperature (_C)
85 105 125
rDS(on) vs. Temperature
100
DG185
DG184
10
DG183
VD= –7.5 V
IS = –10 mA
1
–50 –25
0 25 50 75 100 125
Temperature (_C)
Leakage vs. Temperature (DG183)
100
V+ = 10 V
V– = –20 V
VL = 5 V
VR = 0
10
1
0.1
25
IS(off)
ID(on)
ID(off)
45
65
85
105
125
Temperature (_C)
60
–IINL
40
20
0
–55
IINH
–35 –15
5 25 45 65 85 105 125
Temperature (_C)
Switching Time vs. VD and Temperature (DG183)
230
VD = 7.5 V
210
VD = –7.5 V
tON
190
170
tOFF
150
130
110
90
–55 –35 –15
5 25 45 65
Temperature (_C)
85 105 125
Switching Time vs. VD and Temperature (DG184/185)
130
120
VD = 7.5 V
VD = –7.5 V
110
tON
100
90
tOFF
80
70
60
50
–55 –35 –15
5 25 45 65 85 105 125
Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
4-6
Document Number: 70032
S-52895—Rev. D, 16-Jun-97
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