CNY17_05 Datasheet, PDF (6/9 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output,

CNY17
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
icny17_13
V = f (I )
CEsat
C
I_F = 3 x I_C
10
100
I_C (mA)
Fig. 13 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
icny17_14
V = f (I )
CEsat
C
I_F = 2 x I_C
I_F = 3 x I_C
10
100
I_C (mA)
Fig. 14 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-2
1.0
0.9
0.8
V_CEsat = f (I_C)
0.7
0.6
I_F = I_C
0.5
0.4
0.3
0.2
I_F = 2 x I_C
0.1
0
1
icny17_16
I_F = 3 x I_C
10
100
I_C (mA)
Fig. 16 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-4
200
P_tot = f (T_A)
150
Transistor
100
Diode
50
0
0
icny17_18
25
50
75
100
T (°C)
A
Fig. 17 - Permissible Power Dissipation for Transistor and Diode
1.0
0.9
V_CEsat = f (I_C)
0.8
0.7
0.6
I_F = I_C
0.5
0.4
0.3
0.2
I_F = 2 x I_C
0.1
0
I_F = 3 x I_C
1
10
100
icny17_15
I_C (mA)
Fig. 15 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-3
www.vishay.com
6
For technical questions, contact: [e-mail]
Document Number: 83606
Rev. 1.5, 09-Nov-05