VS-ST380C Datasheet, PDF (5/8 Pages) Vishay Siliconix – Center amplifying gate

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VS-ST380C Series
Vishay Semiconductors
14000
13000
12000
At Any Rated Load Condition And With
Rated V_RRM Applied Following Surge.
Initial T_J= 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
11000
10000
9000
8000
7000 ^{ST380C..C Series}
6000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
15000
Maximum Non Repetitive Surge Current
14000
Versus Pulse Train Duration. Control
Of Conduc tion May Not Be Maintained.
13000
Initial T_J = 125°C
12000
No Voltage Reapplied
Rated V_RRM Reapplied
11000
10000
9000
8000
7000 ST380C..C Series
6000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T_J= 25°C
1000
T_J= 125°C
ST380C..C Series
100
0.5 1 1.5 2 2.5 3 3.5
InstantaneousOn-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
ST380C..C Series
0.01
Steady State Value
R _thJ-hs = 0.09 K/ W
(Single Side Cooled)
R _thJ-hs = 0.04 K/ W
(Double Side Cooled)
(DC Operation)
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z_thJ-hs Characteristics
Revision: 20-Dec-13
5
Document Number: 94410
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