VS-ST173S12PFK0 Datasheet, PDF (5/12 Pages) Vishay Siliconix – Inverter Grade Thyristors

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4500
4000
3500
At any rated load condition and with
rated V_RRM applied following surge.
Initial T_J = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
3000
2500
ST173S Series
2000
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
5000
4500
4000
3500
3000
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial T_J = 125 °C
No voltage reapplied
Rated V_RRM reapplied
2500
2000 _{ST173S Series}
1500
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
10 000
ST173S Series
1000
T_J = 125 °C
T_J = 25 °C
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
VS-ST173S Series
Vishay Semiconductors
1
Steady state value
R_thJC = 0.105 K/W
(DC operation)
0.1
0.01
ST173S Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z_thJC Characteristics
250
ST173S Series
200 ^{TJ = 125 °C}
150
100
50
I
TM
=
500 ^A
= ³⁰⁰
A
I
I TM
=
TM
200
A
I_TM ^{= 100 A}
I_TM = 50 A
0
0
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 9 - Reverse Recovered Current Characteristics
160
140
I_{TM = 500 A}
I_{TM = 300 A}
120
I_{TM = 200 A}
I_{TM = 100 A}
100
I_{TM = 50 A}
80
60
40
ST173S Series
20
T_J = 125 °C
0
0
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 11-Mar-14
5
Document Number: 94367
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