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VS-GB100NH120N Datasheet, PDF (5/7 Pages) Vishay Siliconix – Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A
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VS-GB100NH120N
Vishay Semiconductors
8
7
VCC = 600 V
IC = 100 A
6
VGE = - 15 V
TJ = 125 °C
5
4
Erec
3
2
1
0
0
10 20 30
40
50 60
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Gate Resistance
0.1
Diode
0.01
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
1
2
3
5
4
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95525
Revision: 10-Jun-15
5
Document Number: 94755
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