VS-ETX1506-M3 Datasheet, PDF (5/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 15 A FRED Pt

VS-ETX1506-M3, VS-ETX1506FP-M3
Hyperfast Rectifier, 15 A FRED Pt^® _{Vishay Semiconductors}
55
50
45
If = 15 A, 125°C
40
35
30
25
If = 15 A, 25°C
20
15
typical value
10
100
1000
di _F /dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. dI_F/dt
350
300
250
200
If = 15 A, 125°C
150
100
V_R = 200 V
50
If = 15 A, 25°C
typical value
0
100
1000
di _F/dt (A/µs )
Fig. 10 - Typical Stored Charge vs. dI_F/dt
L = 70 μH
0.01 Ω
D.U.T.
dI_F/dt
adjust
G
D
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
I_F
0
(3)
t_rr
t_a
t_b
(2) _IRRM
(4)
Q_rr
0.5 I_RRM
dI_(rec)M/dt ⁽⁵⁾
0.75 I_RRM
(1) ^dIF^/dt
(1) dI_F/dt - rate of change of current
through zero crossing
(4) Q_rr - area under curve defined by t_rr
and I_RRM
(2) I_RRM - peak reverse recovery current
Q_rr =
t_rr x I_RRM
2
(3) t_rr - reverse recovery time measured
from zero crossing point of negative
going I_F to point where a line passing
through 0.75 I_RRM and 0.50 I_RRM
extrapolated to zero current.
(5) dI_(rec)M/dt - peak rate of change of
current during t_b portion of t_rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Document Number: 93549 For technical questions within your region, please contact one of the following:
Revision: 11-Mar-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000