SUM110N04-03P Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175 °C MOSFET

THERMAL RATINGS
300
250
200
150
100
50
Package Limited
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.05
0.02
Single Pulse
SUM110N04-03P
Vishay Siliconix
1000
Limited by r_DS(on)*
100
10 µs
100 µs
1 ms
10
10 ms
DC, 100 ms
1
T_C = 25 °C
Single Pulse
0.1
0.1
* V_GS
1
10
100
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which r_DS(on) is specified
Safe Operating Area
0.01
10- ⁴
10- ³
10- ²
10- ¹
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72346.
Document Number: 72346
S-80274-Rev. C, 11-Feb-08
www.vishay.com
5