SQ3461EV_15 Datasheet, PDF (5/12 Pages) Vishay Siliconix – Automotive P-Channel 12 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
0.10
0.10
SQ3461EV
Vishay Siliconix
0.08
0.08
0.06
0.04
T_J = 150 °C
0.06
0.04
T_J = 150 °C
0.02
T_J = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage (7.9 A)
0.02
T_J = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage (6.6 A)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10- ⁴
10- ³
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 90 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10- ²
10- ¹
1
10
Square Wave Pulse Duration (s)
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2401-Rev. A, 12-Oct-15
5
Document Number: 62994
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