SIJ482DP Datasheet, PDF (5/10 Pages) Vishay Siliconix – N-Channel 80 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
90
SiJ482DP
Vishay Siliconix
72
54
Package Limited
36
18
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
85
2.5
68
2.0
51
1.5
34
1.0
17
0.5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63728
For technical support, please contact: [e-mail]
www.vishay.com
S12-0544-Rev. A, 12-Mar-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000