SIHB22N60AE Datasheet, PDF (5/7 Pages) Vishay Siliconix – E Series Power MOSFET

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SiHB22N60AE
Vishay Siliconix
1
Duty cycle = 0.5
0.2
0.1 ^0.1
0.05
0.02
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
V_DS
V_GS
R_g
R_D
D.U.T.
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
+- _VDD
Fig. 13 - Switching Time Test Circuit
V_DS
t_p
V_DD
V_DS
I_AS
Fig. 16 - Unclamped Inductive Waveforms
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 14 - Switching Time Waveforms
V_DS
Vary t_p to obtain
required I_AS
R_g
10 V
t_p
L
D.U.T.
I_AS
0.01 Ω
+
- ^VDD
Fig. 15 - Unclamped Inductive Test Circuit
Q_g
10 V
Q_gs
Q_gd
V_G
Charge
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 μF
0.3 μF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S16-1715-Rev. A, 29-Aug-16
5
Document Number: 91922
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