SIE854DF Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

SiE854DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
140
70
120
60
100
50 ^{Package Limited}
80
40
60
30
40
20
10
20
0
0
0
25
50
75
100 125 150
25
T_C - Case Temperature (°C)
Current Derating*
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
5